P. Tavernier, T. Margalith, J. Williams, et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In,” in J. Cryst. Growth, Vol. 264, pp. 150–158, 2004, ISSN: 0022-0248.
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P. Tavernier, T. Margalith, J. Williams, et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In,” in J. Cryst. Growth, Vol. 264, pp. 150–158, 2004, ISSN: 0022-0248.
