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K.E. Sickafus, J.A. Valdez, J.R. Williams, R.W. Grimes, and H.T. Hawkins, “Radiation induced amorphization resistance in A2O3–BO2 oxides,” in Nucl. Instr. and Meth. in Phys. Res. B, Vol. 191, pp. 549–558, 2002, ISSN: 0168-583X.
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P. Tavernier, T. Margalith, J. Williams, et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In,” in J. Cryst. Growth, Vol. 264, pp. 150–158, 2004, ISSN: 0022-0248.
P. Tavernier, T. Margalith, J. Williams, et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In,” in J. Cryst. Growth, Vol. 264, pp. 150–158, 2004, ISSN: 0022-0248.
C. Mercer, J. Williams, D. Clarke, and A. Evans, “On a ferroelastic mechanism governing the toughness of metastable tetragonal-prime (t’) yttria-stabilized zirconia,” in Proc. of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 463, pp. 1393–1408, 2007.
C. Mercer, J. Williams, D. Clarke, and A. Evans, “On a ferroelastic mechanism governing the toughness of metastable tetragonal-prime (t’) yttria-stabilized zirconia,” in Proc. of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 463, pp. 1393–1408, 2007.
